sot-23 plastic-encapsulate diodes MC2836 switching diode features z high speed switching z low capacitance marking:a41 maximum ratings @ta =25 parameter symbol limit unit non-repetitive peak reverse voltage v rm 75 v dc blocking voltage v r 50 v average rectified output current i o 150 ma power dissipation p d 150 mw junction temperature t j 150 storage temperature range t stg -55 ~ +150 electrical characteristics @ta =25 parameter symbol conditions min typ max unit v f1 i f =10ma 1.0 v v f2 i f =50ma 1.1 v v f3 i f =100ma 1.2 v forward voltage i r v r =50v 0.1 ua reverse recovery time t rr i f =10ma,v r =6v,r l =100 ? i rr =0.1*i r 4 ns capacitance between terminals c t v r =0,f=1mhz 4 pf sot-23 1 2 3 reverse current thermal resistance junction to ambient r ja 833 /w 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,feb,2013
0 25 50 75 100 125 150 0 50 100 150 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 02 04 06 08 0 1 10 100 1000 0 5 10 15 20 0.8 0.9 1.0 1.1 1.2 forward characteristics reverse characteristics power derating curve power dissipation p d (mw) ambient temperature ta ( ) MC2836 typical characteristics t a = 1 0 0 t a = 2 5 forward current i f (ma) forward voltage v f (v) ta=100 ta=25 reverse current i r (na) reverse voltage v r (v) 30 3 0.3 0.03 300 30 3 ta=25 f=1mhz capacitance characteristics reverse voltage v r (v) capacitance between terminals c t (pf) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,feb,2013
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